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RF Transistors

RFHIC offers a broad portfolio of gallium nitride (GaN) on silicon carbide (SiC) discrete transistors in various power levels, frequency ranges, and voltages. Offering both standardized and custom solutions, packaged in our highest quality ceramic packages. Our world renowned GaN transistors provide users with unbeatable performance all built by our industry leading reliability.

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Part Number	Datasheet	Min Freq2.	Max Freq.	Typ Output Power			Power Gain		VDC	Package	Package Type	Saturation Power	Efficiency	Min Output Power	Drain Efficiency	Output Power
ID26601D		2620	2690	85	600	14.7	15	47.4	48	RF24009DKR3	Flange	600	47.4	-	-	-
IE27330D		2620	2690	79	330	14.2	14.2	54.0	48	RF24001DKR3	Flange	330	54	-	-	-
IE27330P		2620	2690	63	330	-	15.4	39.0	48	NS-AS01	Flange	330	39	-	-	-
IE27220PE		2620	2690	50	220	17	17	41.5	48	NS-AS01	Flange	220	42	-	-	-
IE27165PE		2620	2690	40	165	-	17	43	48	NS-AS01	Flange	165	43	-	-	-
IE27385D		2620	2690	69	389	13.8	14	53.0	48	RF24001DKR3	Flange	385	53	-	-	-
IE26195WD		2575	2635	32	195	14.4	14.4	53.6	48	RF12001DKR3	Flange	195	54	-	-	-
IE27275D		2575	2635	50	275	14.1	14.1	59.0	48	RF24001DKR3	Flange	275	59	-	-	-
ID26411D		2570	2620	60	410	15.2	15.2	51.1	48	RF24008DKR3	Flange	410	51.1	-	-	-
ID25275WD		2520	2630	40	316	14.4	14.4	50.8	48	RF18010DKR3	Flange	316	50	-	-	-
IE26110P		2500	2690	25	110	18.9	19.1	40.1	48	NS-AS01	Flange	110	40	-	-	-
IE24100P		2400	2500	100	-	-	14.8	73.3	50	-	Flange	-	-	-	72	100
IE24150P		2400	2500	150	-	-	13.3	73.3	50	-	Flange	-	-	-	73.3	150
IE24200P		2400	2500	200	-	-	13.8	76.6	50	-	Flange	-	-	-	74.9	200

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RF Transistors