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Transistors - Wireless Infrastructure

RFHIC offers a broad portfolio of gallium nitride (GaN) on silicon carbide (SiC) discrete transistors designed for Wireless Infrastructure applications – operable sub-6GHz ranges designed for 4G LTE and 5G macro base stations

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Part Number	Datasheet	Min Freq2.	Max Freq.	Typ Output Power	Saturation Power	Power Gain	Efficiency	VDC	Package	Package Type
IE26195WD		2575	2635	32	195	14.4	54	48	RF12001DKR3	Flange
IE27275D		2575	2635	50	275	14.1	59	48	RF24001DKR3	Flange
ID26411D		2570	2620	60	410	15.2	51.1	48	RF24008DKR3	Flange
ID25275WD		2520	2630	40	316	14.4	50	48	RF18010DKR3	Flange
IE26110P		2500	2690	25	110	19.1	40	48	NS-AS01	Flange
IE23195WD		2300	2400	40	220	15.3	56	48	RF12001DKR3	Flange
ID22601D		2110	2200	76	530	15.1	47	48	RF24009DKR3	Flange
ID22411D		2110	2200	54	410	18	52	48	RF24008DKR3	Flange
IE21220P		2110	2170	50	220	18	40	48	NS-AS01	Flange
IE21085P		2110	2170	19	85	21	43	46	NS-AS01	Flange

Wireless Infrastructure

RF Energy

Defense & Aerospace

Company

Transistors - Wireless Infrastructure