RFHIC offers a broad portfolio of gallium nitride (GaN) on silicon carbide (SiC) discrete transistors designed for Wireless Infrastructure applications – operable sub-6GHz ranges designed for 4G LTE and 5G macro base stations
| Part Number | Datasheet | Min Freq2. | Max Freq. | Typ Output Power | Saturation Power | Power Gain | Efficiency | VDC | Package | Package Type |
| ID26601D | 2620 | 2690 | 85 | 600 | 15 | 47.4 | 48 | RF24009DKR3 | Flange | |
| IE27330P | 2620 | 2690 | 63 | 330 | 15.4 | 39 | 48 | NS-AS01 | Flange | |
| IE27220PE | 2620 | 2690 | 50 | 220 | 17 | 42 | 48 | NS-AS01 | Flange | |
| IE27165PE | 2620 | 2690 | 40 | 165 | 17 | 43 | 48 | NS-AS01 | Flange | |
| IE27330D | 2620 | 2690 | 79 | 330 | 14.2 | 54 | 48 | RF24001DKR3 | Flange | |
| IE27385D | 2620 | 2690 | 69 | 385 | 14 | 53 | 48 | RF24001DKR3 | Flange | |
| IE26195WD | 2575 | 2635 | 32 | 195 | 14.4 | 54 | 48 | RF12001DKR3 | Flange | |
| IE27275D | 2575 | 2635 | 50 | 275 | 14.1 | 59 | 48 | RF24001DKR3 | Flange | |
| ID26411D | 2570 | 2620 | 60 | 410 | 15.2 | 51.1 | 48 | RF24008DKR3 | Flange | |
| ID25275WD | 2520 | 2630 | 40 | 316 | 14.4 | 50 | 48 | RF18010DKR3 | Flange | |
| IE26110P | 2500 | 2690 | 25 | 110 | 19.1 | 40 | 48 | NS-AS01 | Flange | |
| IE23195WD | 2300 | 2400 | 40 | 220 | 15.3 | 56 | 48 | RF12001DKR3 | Flange | |
| ID22601D | 2110 | 2200 | 76 | 530 | 15.1 | 47 | 48 | RF24009DKR3 | Flange | |
| ID22411D | 2110 | 2200 | 54 | 410 | 18 | 52 | 48 | RF24008DKR3 | Flange |