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RF Transistors

RFHIC offers a broad portfolio of gallium nitride (GaN) on silicon carbide (SiC) discrete transistors in various power levels, frequency ranges, and voltages. Offering both standardized and custom solutions, packaged in our highest quality ceramic packages. Our world renowned GaN transistors provide users with unbeatable performance all built by our industry leading reliability.

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Part Number	Datasheet	Min Freq2.	Max Freq.	Typ Output Power			Power Gain		VDC	Package	Package Type	Saturation Power	Efficiency	Min Output Power	Drain Efficiency	Output Power
ID20275WD		1880	2025	48	282	15.2	15.3	54.6	48	RF18010DKR3	Flange	282	53	-	-	-
IE19195WD		1880	2025	32	195	16.9	17	49.9	48	RF12001DKR3	Flange	195	49	-	-	-
ID18275WD		1805	1880	50	275	13.8	14	56.6	48	RF18010DKR3	Flange	331	56.4	-	-	-
IE18165P		1805	1880	37	165	18.1	18.3	40.6	48	NS-AS01	Flange	170	39	-	-	-
IE18085P		1805	1880	19	85	19.4	19	40.5	48	RF12002KR3	Flange	90	37	-	-	-
IE18330D		1805	1880	63	330	15.5	16	57.7	48	RF24001DKR3	Flange	330	57	-	-	-
IE18330PG		1805	1880	74	330	15.4	16	41.5	48	NS-AS01	Flange	330	40	-	-	-
IE18250D		1805	1880	45	250	16.7	17	58.2	48	RF24001DKR3	Flange	260	58	-	-	-
IE18220PG		1805	1880	50	220	18.3	18.1	42.7	48	NS-AS01	Flange	220	41	-	-	-
ID18411D		1800	1880	56.2	410	17.6	18	53.5	48	RF24008DKR3	Flange	410	54	-	-	-
IE13550D		1295	1305	550	-	-	14.9	79.5	50	-	Flange	-	-	-	79.2	550
IE09150PC		900	930	150	-	-	17.6	83.11	50	-	Flange	-	-	-	83.1	150
IE09300PC		900	930	300	-	-	18	80.21	50	-	Flange	-	-	-	80.2	300
IE08165P		770	900	37	165	18.1	51	40.6	48	NS-AS01	Flange	165	40	-	-	-

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RF Transistors