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RF Transistors

RFHIC offers a broad portfolio of gallium nitride (GaN) on silicon carbide (SiC) discrete transistors in various power levels, frequency ranges, and voltages. Offering both standardized and custom solutions, packaged in our highest quality ceramic packages. Our world renowned GaN transistors provide users with unbeatable performance all built by our industry leading reliability.

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Part Number	Datasheet	Min Freq2.	Max Freq.	Typ Output Power			Power Gain		VDC	Package	Package Type	Saturation Power	Efficiency	Min Output Power	Drain Efficiency	Output Power
IE23195WD		2300	2400	40	240	15.0	15.3	56.5	48	RF12001DKR3	Flange	220	56	-	-	-
ID22601D		2110	2200	76	530	15.1	15.1	46.8	48	RF24009DKR3	Flange	530	47	-	-	-
ID22411D		2110	2200	54	410	17.5	18	51.8	48	RF24008DKR3	Flange	410	52	-	-	-
IE21330P		2110	2170	79	330	15.9	16	40.3	48	NS-AS01	Flange	330	40	-	-	-
IE21220P		2110	2170	50	220	17.4	18	40.0	48	NS-AS01	Flange	220	40	-	-	-
IE21165PE		2110	2170	37	165	-	18	39.6	48	NS-DS01	Flange	170	40	-	-	-
IE21085P		2110	2170	19	85	20.7	21	43.1	46	NS-AS01	Flange	85	43	-	-	-
IE21385D		2110	2170	63	385	14.6	15	55.7	48	RF24001DKR3	Flange	385	56	-	-	-
IE21110P		2110	2170	25	110	18.3	18.4	39.0	48	NS-AS01	Flange	120	39	-	-	-
ID19411D		1995	2020	55	410	17.7	18	49.6	48	RF24008DKR3	Flange	410	50	-	-	-

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RF Transistors