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RF Transistors

RFHIC offers a broad portfolio of gallium nitride (GaN) on silicon carbide (SiC) discrete transistors in various power levels, frequency ranges, and voltages. Offering both standardized and custom solutions, packaged in our highest quality ceramic packages. Our world renowned GaN transistors provide users with unbeatable performance all built by our industry leading reliability.

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Part Number	Datasheet	Min Freq2.	Max Freq.	Typ Output Power			Power Gain		VDC	Package	Package Type	Saturation Power	Efficiency	Min Output Power	Drain Efficiency	Output Power
IE26195WD		2575	2635	32	195	14.4	14.4	53.6	48	RF12001DKR3	Flange	195	54	-	-	-
IE27275D		2575	2635	50	275	14.1	14.1	59.0	48	RF24001DKR3	Flange	275	59	-	-	-
ID26411D		2570	2620	60	410	15.2	15.2	51.1	48	RF24008DKR3	Flange	410	51.1	-	-	-
ID25275WD		2520	2630	40	316	14.4	14.4	50.8	48	RF18010DKR3	Flange	316	50	-	-	-
IE26110P		2500	2690	25	110	18.9	19.1	40.1	48	NS-AS01	Flange	110	40	-	-	-
IE24100P		2400	2500	100	-	-	14.8	73.3	50	-	Flange	-	-	-	72	100
IE24150P		2400	2500	150	-	-	13.3	73.3	50	-	Flange	-	-	-	73.3	150
IE24200P		2400	2500	200	-	-	13.8	76.6	50	-	Flange	-	-	-	74.9	200
IE24300P		2400	2500	300	-	-	12.3	71.2	50	-	Flange	-	-	-	71.2	300
ID24330WD		2300	2500	338	-	-	13.5	65.0	48	-	Flange	347	-	343	47.2	347

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RF Transistors