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Transistors - Wireless Infrastructure

RFHIC offers a broad portfolio of gallium nitride (GaN) on silicon carbide (SiC) discrete transistors designed for Wireless Infrastructure applications – operable sub-6GHz ranges designed for 4G LTE and 5G macro base stations

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Part Number	Datasheet	Min Freq2.	Max Freq.	Typ Output Power	Saturation Power	Power Gain	Efficiency	VDC	Package	Package Type
IE18085P		1805	1880	19	90	19	37	48	RF12002KR3	Flange
IE18165P		1805	1880	37	170	18.3	39	48	NS-AS01	Flange
IE18330D		1805	1880	63	330	16	57	48	RF24001DKR3	Flange
IE18330PG		1805	1880	74	330	16	40	48	NS-AS01	Flange
IE18250D		1805	1880	45	260	17	58	48	RF24001DKR3	Flange
IE18220PG		1805	1880	50	220	18.1	41	48	NS-AS01	Flange
ID18411D		1800	1880	56.2	410	18	54	48	RF24008DKR3	Flange
IE08165P		770	900	37	165	51	40	48	NS-AS01	Flange
IE08220P		758	858	50	240	22	39	48	NS-AS01	Flange
DT12060P		-	6000	14.1	65	17	37	48	NS-CS01	Flange

Wireless Infrastructure

RF Energy

Defense & Aerospace

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Transistors - Wireless Infrastructure