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RF Transistors

RFHIC offers a broad portfolio of gallium nitride (GaN) on silicon carbide (SiC) discrete transistors in various power levels, frequency ranges, and voltages. Offering both standardized and custom solutions, packaged in our highest quality ceramic packages. Our world renowned GaN transistors provide users with unbeatable performance all built by our industry leading reliability.

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Part Number	Datasheet	Min Freq2.	Max Freq.	Typ Output Power			Power Gain		VDC	Package	Package Type	Saturation Power	Efficiency	Min Output Power	Drain Efficiency	Output Power
IE18220PG		1805	1880	50	220	18.3	18.1	42.7	48	NS-AS01	Flange	220	41	-	-	-
ID18411D		1800	1880	56.2	410	17.6	18	53.5	48	RF24008DKR3	Flange	410	54	-	-	-
IE13550D		1295	1305	550	-	-	14.9	79.5	50	-	Flange	-	-	-	79.2	550
IE09150PC		900	930	150	-	-	17.6	83.11	50	-	Flange	-	-	-	83.1	150
IE09300PC		900	930	300	-	-	18	80.21	50	-	Flange	-	-	-	80.2	300
IE08165P		770	900	37	165	18.1	51	40.6	48	NS-AS01	Flange	165	40	-	-	-
IE08220P		758	858	50	220	20.9	22	40.0	48	NS-AS01	Flange	240	39	-	-	-
ET43014P		-	6000	14	-	-	15.5	68.2	50	-	Flange	-	-	-	68.2	14
ET43055P		-	6000	55	-	-	13.4	75.2	50	-	Flange	-	-	-	72.6	55
ET43028P		-	6000	28	-	-	16	71.0	50	-	Flange	-	-	-	68.8	28

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RF Transistors