Wireless Infrastructure
Meeting the continually evolving demands for 4G LTE & 5G wireless infrastructure applications with RFHIC's gallium nitride (GaN) on silicon carbide (SiC) technology solutions

RFHIC offers a broad portfolio of gallium nitride (GaN) on silicon carbide (SiC) discrete transistors designed for Wireless Infrastructure applications – operable sub-6GHz ranges designed for 4G LTE and 5G macro base stations
Part Number | Datasheet | Min Freq2. | Max Freq. | Typ Output Power | Saturation Power | Power Gain | Efficiency | VDC | Package | Package Type |
RT12055P | - | 6000 | 13 | 60 | 16 | 34 | 47 | NS-CS01 | Flange | |
ETQ2028P | - | 6000 | 6.3 | 30 | 19 | 33 | 48 | DFN66726L-Q2 | Surface Mount | |
RT12028P | - | 6000 | 6.3 | 30 | 18 | 30 | 48 | NS-CS01 | Flange | |
RT12014P | - | 6000 | 3.2 | 14 | 18 | 35 | 48 | NS-CS01 | Flange | |
ETQ2014P | - | 6000 | 3.2 | 15 | 19 | 34 | 48 | DFN66726L-Q2 | Surface Mount | |
IE26085P | - | - | 19 | - | - | - | 52 | NS-AS01 | Flange |