RFHIC offers a broad portfolio of gallium nitride (GaN) on silicon carbide (SiC) discrete transistors designed for Wireless Infrastructure applications – operable sub-6GHz ranges designed for 4G LTE and 5G macro base stations
| Part Number | Datasheet | Min Freq2. | Max Freq. | Typ Output Power | Saturation Power | Power Gain | Efficiency | VDC | Package | Package Type |
| IE21330P |
|
2110 | 2170 | 79 | 330 | 16 | 40 | 48 | NS-AS01 | Flange |
| IE21165PE | 2110 | 2170 | 37 | 170 | 18 | 40 | 48 | NS-DS01 | Flange | |
| IE21385D | 2110 | 2170 | 63 | 385 | 15 | 56 | 48 | RF24001DKR3 | Flange | |
| IE21110P |
|
2110 | 2170 | 25 | 120 | 18.4 | 39 | 48 | NS-AS01 | Flange |
| ID19411D | 1995 | 2020 | 55 | 410 | 18 | 50 | 48 | RF24008DKR3 | Flange | |
| ID19601D | 1930 | 1995 | 81.3 | 600 | 16.2 | 48.2 | 48 | RF24009DKR3 | Flange | |
| ID20411D | 1930 | 2200 | 56.2 | 410 | 16 | 48.1 | 48 | RF24008DKR3 | Flange | |
| ID20275WD |
|
1880 | 2025 | 48 | 282 | 15.3 | 53 | 48 | RF18010DKR3 | Flange |
| IE19195WD |
|
1880 | 2025 | 32 | 195 | 17 | 49 | 48 | RF12001DKR3 | Flange |
| ID18275WD |
|
1805 | 1880 | 50 | 331 | 14 | 56.4 | 48 | RF18010DKR3 | Flange |