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Transistors - Wireless Infrastructure

RFHIC offers a broad portfolio of gallium nitride (GaN) on silicon carbide (SiC) discrete transistors designed for Wireless Infrastructure applications – operable sub-6GHz ranges designed for 4G LTE and 5G macro base stations

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Part Number	Datasheet	Min Freq2.	Max Freq.	Typ Output Power	Saturation Power	Power Gain	Efficiency	VDC	Package	Package Type
ID36461D		3400	3600	56.2	460	14.4	46	48	RF24008DKR3	Flange
IE36110W		3400	3600	25	110	17.1	35	48	RF12001KR3	Flange
IE36085W		3400	3600	19	85	17.3	35	48	RF12002KR3	Flange
ID26275WD		2620	2690	54	316	14.1	51	48	RF18010DKR3	Flange
ID26601D		2620	2690	85	600	15	47.4	48	RF24009DKR3	Flange
IE27330P		2620	2690	63	330	15.4	39	48	NS-AS01	Flange
IE27220PE		2620	2690	50	220	17	42	48	NS-AS01	Flange
IE27165PE		2620	2690	40	165	17	43	48	NS-AS01	Flange
IE27330D		2620	2690	79	330	14.2	54	48	RF24001DKR3	Flange
IE27385D		2620	2690	69	385	14	53	48	RF24001DKR3	Flange

Wireless Infrastructure

RF Energy

Defense & Aerospace

Company

Transistors - Wireless Infrastructure