RFHIC offers a broad portfolio of gallium nitride (GaN) on silicon carbide (SiC) discrete transistors designed for RF Energy applications – operable in 915MHz, 2.45GHz, 5.8GHz with power levels capable up to 1kw.
| Part Number | Datasheet | Min Freq2. | Max Freq. | Output Power | Power Gain | Drain Efficiency | VDC | Package Type |
| IE24100P |
|
2400 | 2500 | 100 | 14.8 | 72 | 50 | Flange |
| IE24150P |
|
2400 | 2500 | 150 | 13.3 | 73.3 | 50 | Flange |
| IE24200P |
|
2400 | 2500 | 200 | 13.8 | 74.9 | 50 | Flange |
| IE24300P |
|
2400 | 2500 | 300 | 12.3 | 71.2 | 50 | Flange |
| ID24330WD |
|
2300 | 2500 | 347 | 13.5 | 47.2 | 48 | Flange |
| IE13550D |
|
1295 | 1305 | 550 | 14.9 | 79.2 | 50 | Flange |
| IE09150PC |
|
900 | 930 | 150 | 17.6 | 83.1 | 50 | Flange |
| IE09300PC |
|
900 | 930 | 300 | 18 | 80.2 | 50 | Flange |
| ET43014P |
|
- | 6000 | 14 | 15.5 | 68.2 | 50 | Flange |
| ET43028P |
|
- | 6000 | 28 | 16 | 68.8 | 50 | Flange |