Wireless Infrastructure
Meeting the continually evolving demands for 4G LTE & 5G wireless infrastructure applications with RFHIC's gallium nitride (GaN) on silicon carbide (SiC) technology solutions
RFHIC’s RRP090100120-15 is a 120W gallium-nitride (GaN) module amplifier designed for radar systems applications. Operating from 9000 to 10000 MHz, the RRP090100120-15 achieves 15 dB of gain with an efficiency of 30%. The RRP090100120-15 utilizes our in-house gallium-nitride on silicon carbide (GaN-on-SiC) technology, resulting in higher breakdown voltage, wider bandwidth, and higher efficiency. Both RF ports have integrated DC-blocking capacitors and are fully matched to 50 Ohms.
View Product Specification| Band | X-band |
|---|---|
| Min Freq2. | 9000MHz |
| Max Freq. | 10000MHz |
| Type | Module |
| Typ Output Power | 51W |
| Power Gain | 15dB |
| PAE | 30% |
| VDC | 50 |