Wireless Infrastructure
Meeting the continually evolving demands for 4G LTE & 5G wireless infrastructure applications with RFHIC's gallium nitride (GaN) on silicon carbide (SiC) technology solutions
ID38461DR
Description
RFHIC’s ID38461DR is a discrete gallium nitride on silicon carbide (GaN-on-SiC) high-electron-mobility transistor (HEMT) which operates up to 3980 MHz. Delivering 460 W of saturated power at 48V, the ID38461DR can be used in Doherty architecture for the final stage of a base station power amplifier for WiMAX, LTE, and GSM systems.
View Product Specification
WiMAX, LTE, WCDMA, GSM
Multi-Band, Multi-Mode
Multi-Carrier
Doherty Amplifier
Specification
| Max Freq. | 3980MHz |
|---|---|
| Typ Output Power | 56.2W |
| Saturation Power | 460W |
| Power Gain | 15dB |
| Efficiency | 47% |
| VDC | 48 |
| Package | RF24008DKR3 |
| Package Type | Flange |
| Min Freq2. | 3700MHz |
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