Wireless Infrastructure
Meeting the continually evolving demands for 4G LTE & 5G wireless infrastructure applications with RFHIC's gallium nitride (GaN) on silicon carbide (SiC) technology solutions
AE427
Description
RFHIC’s AE427 is a cost-efficient 75 Ohm GaAs HEMT monolithic microwave integrated circuit (MMIC) low-noise amplifier designed for CATV and FTTH (GPON, GEPON) applications. Covering from 5 to 2200 MHz, the AE427 provides a high gain of 25 dB with 40 dBm OIP3 and 2 dB NF. This device is fabricated on Gallium Arsenide Enhancement Mode (GaAs HEMT, providing lower current draw, noise, and linearity.
View Product Specification
Receiver IF Amplifier
Cellular Communications
Base Station
CATV
DCS
WCDMA
Specification
| Max Freq. | 2200MHz |
|---|---|
| Noise Figure | 2.0dB |
| VDC | 8 |
| Package | SOT-89 |
| Min Freq2. | 5MHz |
Related Products
AE312 ›
RFHIC’s AE312 is a cost-efficient 75 Ohm GaAs HEMT monolithic microwave integrated circuit (MMIC) low-noise amplifier designed for CATV and FTTH (GPON,...
AE367 ›
RFHIC’s AE367 is a gallium arsenide GaAs HEMT monolithic microwave integrated circuit (MMIC) designed as a pre-drive or drive amplifier for 2G and 3G c...
AE366 ›
RFHIC’s AE366 is a gallium arsenide GaAs HEMT monolithic microwave integrated circuit (MMIC) designed for global mobile communication systems (GSM) and...
AE368 ›
RFHIC’s AE368 is a gallium arsenide GaAs HEMT monolithic microwave integrated circuit (MMIC) designed ideally for satellite systems, RFID, and femtocel...
