Wireless Infrastructure
Meeting the continually evolving demands for 4G LTE & 5G wireless infrastructure applications with RFHIC's gallium nitride (GaN) on silicon carbide (SiC) technology solutions

RFHIC’s broad range of GaN solid-state power amplifiers for high-power defense and rf energy applications. Each amplifier is designed using our advanced GaN HEMT technology, allowing them to achieve immense high powers with excellent thermal stability.
Part Number | Datasheet | Min Freq2. | Max Freq. | Band | Type | Typ Output Power | Power Gain | VDC | PAE | Efficiency | Typ Output P1dB | RF Input Connector | RF Output Connector | Cooling | Output Power | Min TX Output Power | RX Gain | TX Gain | RX Noise Figure | Operating Mode | |||||
RWP06040-10 |
|
450 | 880 | - | Pallet | 40 | 40 | 40 | 28 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
RFM0458-4TRM-020 |
|
433 | 5875 | - | Module | 25 | 44 | 44 | 43 | 55 | 55 | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
RWS05520-10 |
|
420 | 470 | - | - | - | 40 | 40 | 28 | - | - | - | - | 45 | - | - | - | - | - | - | - | - | - | - | - |
RRP03250-10 | 135 | 460 | - | Module | 300 | 31 | 31 | 50 | 40 | 40 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | |
RWS02520-1K |
|
100 | 600 | - | - | 20 | 41 | 46 | 27 | - | - | - | - | - | - | - | - | - | - | - | - | - | 46 | - | - |
RWP05040-10NPIN |
|
20 | 1000 | - | Pallet | 40 | 38 | 38 | 28 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
RWS02520-10 |
|
20 | 512 | - | Pallet | 20 | 41 | 41 | 28 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
RFC1G21H4-24 |
|
20 | 1000 | - | Pallet | 2 | 21 | 21 | 24 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
RFC1G21H4-24-S |
|
20 | 1000 | - | Pallet | 2 | 21 | 21 | 24 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
RWP03160-10 |
|
20 | 500 | - | Pallet | 159 | 43 | 43 | 28 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |