Wireless Infrastructure
Meeting the continually evolving demands for 4G LTE & 5G wireless infrastructure applications with RFHIC's gallium nitride (GaN) on silicon carbide (SiC) technology solutions
RWP15080-10
Description
RFHIC’s RWP15080-10 is a gallium-nitride-on silicon carbide (GaN-on-SiC) wideband amplifier suited for broadcasting and communication system applications. Covering from 700 to 2500 MHz, the RWP15080-10 yields a small signal gain of 53 dB with 50 dBm at Pin 3dBm. The RWP15080-10 is designed using RFHIC’s GaN-on-SiC high-electron-mobility transistors (HEMT), providing high breakdown voltage, efficiency, and lower thermal dissipation. The device is fully matched for easier system integration.
View Product Specification
Military Radar
Satellite Communications
Radio Power Amplifier
Wideband Jammer
Electronic Warfare
Specification
| Min Freq2. | 700MHz |
|---|---|
| Max Freq. | 2700MHz |
| Type | Pallet |
| Typ Output Power | 100W |
| Power Gain | 53dB |
| VDC | 32 |
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