Wireless Infrastructure
Meeting the continually evolving demands for 4G LTE & 5G wireless infrastructure applications with RFHIC's gallium nitride (GaN) on silicon carbide (SiC) technology solutions
RWS02520-1K
Description
RFHIC’s RWS02520-1K is a 20W, 100-600 MHz, gallium-nitride (GaN) Wideband Amplifier covering high frequency (HF), very high frequency (VHF), and ultra-high frequency (UHF) communication systems. Designed for many applications, including communication systems, laser drive amplifiers, wideband jammers, and more, the RWS02520-1K is based on RFHIC’s GaN-on-SiC technology. Given RFHIC’s patented thermal handling technology, its compact design is suitable for using manpack radios. With a power supply of +28V, the amplifier offers a typical small signal gain of 46DB, with a P1dB of 43dBm. Gate on/off switching is typically available with a high-speed switching time of 3us. The shutdown mechanism is realized using the drain on/off, with a delay of only 300ms.
View Product Specification
High Frequency Communications Systems
Satellite Communications
Wideband Jammers
Laser Drive Amplifiers
Specification
| Min Freq2. | 100MHz |
|---|---|
| Max Freq. | 600MHz |
| Typ Output Power | 20W |
| Power Gain | 46dB |
| VDC | 27 |
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