Wireless Infrastructure
Meeting the continually evolving demands for 4G LTE & 5G wireless infrastructure applications with RFHIC's gallium nitride (GaN) on silicon carbide (SiC) technology solutions
RWP05040-10NPIN
Description
RFHIC’s RWP05040-10NPIN is based on the RWP05040-10, with the pins removed.
The RWP05040-10NPIN is a gallium-nitride-on silicon carbide (GaN-on-SiC) wideband amplifier suited for broadcasting and communication system applications. Covering from 20 to 1000 MHz, the wideband amplifier yields a small signal gain of 38 dB with 46 dBm at P3dB. The RWP05040-10NPIN is designed using RFHIC’s GaN-on-SiC high-electron-mobility transistors (HEMT), providing high breakdown voltage, efficiency, and lower thermal dissipation. The device is fully matched for easier system integration.
View Product Specification
Communication Systems
Laser Drive Amplifier
Radio Power Amplifier
Wideband Jammer
Specification
| Min Freq2. | 20MHz |
|---|---|
| Max Freq. | 1000MHz |
| Type | Pallet |
| Typ Output Power | 40W |
| Power Gain | 38dB |
| VDC | 28 |
Related Products
RWP03040-10 ›
RFHIC’s RWP03040-10 is a gallium-nitride-on silicon carbide (GaN-on-SiC) wideband amplifier suited for broadcasting and communication system applicatio...
RWP03060-10 ›
RFHIC’s RWP03060-10 is a gallium-nitride-on silicon carbide (GaN-on-SiC) wideband amplifier suited for broadcasting and communication system applicatio...
RWP03160-10 ›
RFHIC’s RWP03160-10 is a gallium-nitride-on silicon carbide (GaN-on-SiC) wideband amplifier suited for broadcasting and communication system applicatio...
RWP05040-10 ›
RFHIC’s RWP05040-10 is a gallium-nitride-on silicon carbide (GaN-on-SiC) wideband amplifier suited for broadcasting and communication system applicatio...