Wireless Infrastructure
Meeting the continually evolving demands for 4G LTE & 5G wireless infrastructure applications with RFHIC's gallium nitride (GaN) on silicon carbide (SiC) technology solutions
RNP21040-50
Description
RFHIC’s RNP21040-50 is a gallium-nitride on silicon carbide (GaN-on-SiC) narrow-band high-power amplifier suited for general-purpose RF applications. Covering from 2100 to 2170 MHz, the RNP21040-50 yields a small signal gain of 33 dB with 47.5 dBm at the P3dB peak. The RNP21040-50 is designed using RFHIC’s GaN-on-SiC high-electron-mobility transistors (HEMT) on aluminum sub-carriers, providing high breakdown voltage, efficiency, and lower thermal dissipation. The device is fully matched for easier system integration.
View Product Specification
Communication Systems
Laser Drive Amplifier
Radio Power Amplifier
Wideband Jammer
Specification
| Min Freq2. | 2100MHz |
|---|---|
| Max Freq. | 2170MHz |
| Type | Pallet |
| Typ Output Power | 52W |
| Power Gain | 52dB |
| PAE | 50% |
| VDC | 28 |
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