Wireless Infrastructure
Meeting the continually evolving demands for 4G LTE & 5G wireless infrastructure applications with RFHIC's gallium nitride (GaN) on silicon carbide (SiC) technology solutions
RFC1G21H4-24-S
Description
RFHIC’s RFC1G21H4-24-S is a wideband amplifier module designed for drive amplifier applications. With a frequency range of 20 to 1000 MHz, the RFC1G21H4-24-S provides a broadband small-signal gain of 21 dB with 36 dBm P3dB. The RFC1G21H4-24-S is assembled with RFHIC’s gallium-nitride on silicon carbide (GaN-on-SiC) high-electron-mobility transistors (HEMT), providing low distortion and high small-signal gain. The device is packaged on a copper-gold plate heat sink to provide excellent thermal conductivity. The RFC1G21H4-24-S is equipped with an over-voltage suppressor, and an external circuit is not required.
View Product Specification
Drive Amplifier
Fiber Optical Node
Specification
| Min Freq2. | 20MHz |
|---|---|
| Max Freq. | 1000MHz |
| Type | Pallet |
| Typ Output Power | 2W |
| Power Gain | 21dB |
| VDC | 24 |
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