Wireless Infrastructure
Meeting the continually evolving demands for 4G LTE & 5G wireless infrastructure applications with RFHIC's gallium nitride (GaN) on silicon carbide (SiC) technology solutions
RUM43020-10
Description
RFHIC’s RUM43020-10 is a gallium-nitride-on silicon carbide (GaN-on-SiC) wideband amplifier suited for broadcasting and communication system applications. Covering from 2000 to 6000 MHz, the RUM43020-10 yields a small signal gain of 35 dB with 43 dBm at P3dB peak. The RUM43020-10 is designed to provide high breakdown voltage, efficiency, and lower thermal dissipation. The device is fully matched for easier system integration.
View Product Specification
Communication Systems
Laser Drive Amplifier
Radio Power Amplifier
Wideband Jammer
Specification
| Min Freq2. | 2000MHz |
|---|---|
| Max Freq. | 6000MHz |
| Type | Pallet |
| Typ Output Power | 20W |
| Power Gain | 35dB |
| PAE | 20% |
| VDC | 28 |
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