Wireless Infrastructure
Meeting the continually evolving demands for 4G LTE & 5G wireless infrastructure applications with RFHIC's gallium nitride (GaN) on silicon carbide (SiC) technology solutions
RFW2500H10-28
Description
RFHIC’s RFW2500H10-28 is a gallium-nitride-on silicon carbide (GaN-on-SiC) wideband amplifier suited for broadcasting and communication system applications. Covering from 20 to 2500 MHz, the RFW2500H10-28 yields a small signal gain of 17 dB with 36 dBm at P3dB. The RFW2500H10-28 is designed using RFHIC’s GaN-on-SiC high-electron-mobility transistors (HEMT), providing high breakdown voltage, efficiency, and lower thermal dissipation. The device is fully matched for easier system integration.
View Product Specification
Communication Systems
Laser Drive Amplifier
Radio Power Amplifier
Wideband Jammer
Specification
| Min Freq2. | 20MHz |
|---|---|
| Max Freq. | 2500MHz |
| Type | Pallet |
| Typ Output Power | 4W |
| Typ Output P1dB | 36dBm |
| Power Gain | 17dB |
| VDC | 28 |
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