Wireless Infrastructure
Meeting the continually evolving demands for 4G LTE & 5G wireless infrastructure applications with RFHIC's gallium nitride (GaN) on silicon carbide (SiC) technology solutions
RTP1623050-20
Description
RFHIC’s RTP1623050-20 is a gallium-nitride-on silicon carbide (GaN-on-SiC) wideband amplifier suited for broadcasting and communication system applications. Covering from 1600 to 2300 MHz, the RTP1623050-20 yields a small signal gain of 10 dB with 54 dBm at P3dB peak. The RTP1623050-20 is designed using RFHIC’s GaN-on-SiC high-electron-mobility transistors (HEMT), providing high breakdown voltage, efficiency, and lower thermal dissipation. The device is fully matched for easier system integration.
View Product Specification
Communication Systems
Laser Drive Amplifier
Radio Power Amplifier
Wideband Jammer
Specification
| Min Freq2. | 1600MHz |
|---|---|
| Max Freq. | 2300MHz |
| Type | Pallet |
| Typ Output Power | 50W |
| Power Gain | 10dB |
| PAE | 55% |
| VDC | 28 |
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