Wireless Infrastructure
Meeting the continually evolving demands for 4G LTE & 5G wireless infrastructure applications with RFHIC's gallium nitride (GaN) on silicon carbide (SiC) technology solutions
WL2215-L
Description
RFHIC’s WL2215-L is a GaAs hybrid low-noise amplifier designed using RFHIC’s
HEMT (high-electron-mobility) process. Operating from 50 to 2200 MHz, the WL2215-L yields a high gain of 15 with 35 dBm OIP3 levels. The WL2215-L is packaged in a hybrid surface mount (SMD); no matching circuit is required. The device is ideally suited for MILCOM and defense jammer applications.
View Product Specification
2G & 3G Repeater
Base Station
GSM
Specification
| Min Freq2. | 50MHz |
|---|---|
| Max Freq. | 2200MHz |
| Typ Output P1dB | 21dBm |
| Noise Figure | 1.7dB |
| Power Gain | 15dB |
| VDC | 8 |
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