Wireless Infrastructure
Meeting the continually evolving demands for 4G LTE & 5G wireless infrastructure applications with RFHIC's gallium nitride (GaN) on silicon carbide (SiC) technology solutions
WL2208-L
Description
RFHIC”s WL2208-L is a GaAs hybrid low-noise amplifier designed using RFHIC’s E-p high-electron-mobility (HEMT) process. Operating from 50 to 2200 MHz, the WL2208-L yields a high gain of 15 with 31 dBm OIP3 levels. The WL2208-L is packaged in a hybrid surface mount (SMD); no matching circuit is required. The device is ideally suited for MILCOM and defense jammer applications.
View Product Specification
2G & 3G Repeater
Base Station
RF Sub-Systems
Specification
| Min Freq2. | 50MHz |
|---|---|
| Max Freq. | 2200MHz |
| Typ Output P1dB | 20dBm |
| Noise Figure | 1.5dB |
| Power Gain | 15dB |
| VDC | 8 |
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