Wireless Infrastructure
Meeting the continually evolving demands for 4G LTE & 5G wireless infrastructure applications with RFHIC's gallium nitride (GaN) on silicon carbide (SiC) technology solutions
RFDFK
Description
RFHIC’s RFDFK is a gallium nitride (GaN) hybrid Power Amplifier designed ideally for 5G NR and 4G LTE systems. Covering 3400 to 3650 MHz, the RFDFK provides an output power of 9.1W with high efficiency of 47.3%. The RFDFK is packaged in a compact hybrid surface mount (SMD) on an aluminum nitride (AIN) board for excellent thermal dissipation. The RFDFK is integrated with asymmetric Doherty configurations resulting in higher power-added efficiency for the entire module at 9.1W average power. To simplify system integration, the RFDFK is fully matched to 50 ohms with integrated DC blocking caps on both RF ports.
View Product Specification
5G NR system
4G/LTE system
Massive MIMO
Specification
| Max Freq. | 3650MHz |
|---|---|
| Typ Output Power | 9.1W |
| Saturation Power | 90W |
| Power Gain | 32dB |
| Efficiency | 47.3% |
| VDC | 40 |
| Package | PP-1S |
| Package Type | Surface Mount |
| Min Freq2. | 3400MHz |
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