Wireless Infrastructure
Meeting the continually evolving demands for 4G LTE & 5G wireless infrastructure applications with RFHIC's gallium nitride (GaN) on silicon carbide (SiC) technology solutions
RNP04006-A1
Description
RFHIC’s RNP04006-A1 is a 4W, RNP04006-A1 Hybrid Amplifier designed for defense communications (data links) and EW (tactical radio systems) applications. Operating from 400 to 450 MHz, the RNP04006-A1 achieves 33dB of gain with an efficiency of 70%.
The RNP04006-A1 is designed with RFHIC’s gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) high-electron-mobility (HEMT) technology, resulting in higher breakdown voltage, wider bandwidth, and higher efficiency.
The RNP04006-A1 achieves a duty of10% and a pulse width of 100 us. Both RF ports have integrated DC blocking capacitors and are fully matched to 50 Ohms.
View Product Specification
RF Sub-Systems
Base Station
Specification
| Max Freq. | 450MHz |
|---|---|
| Typ Output Power | 3.9W |
| Power Gain | 33dB |
| Efficiency | 70% |
| VDC | 24 |
| Package | HY-6 |
| Package Type | Surface Mount |
| Min Freq2. | 400MHz |
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