Wireless Infrastructure
Meeting the continually evolving demands for 4G LTE & 5G wireless infrastructure applications with RFHIC's gallium nitride (GaN) on silicon carbide (SiC) technology solutions
HM0225-05B
Description
RFHIC’s HM0225-05B is a gallium-nitride (GaN) hybrid power amplifier ideally suited for radio systems and electronic warfare jammer applications. Covering from 200 to 2500 MHz, the HM0225-05B yields a high gain of 34 dB with 31% efficiency at P3dB. The HM0225-05B is designed using RFHIC’s gallium-nitride on silicon carbide (GaN-on-SiC) high-electron-mobility (HEMT) and is packaged in a hybrid surface mount (SMD) using a metal-lid and aluminum nitride (AIN) board to provide excellent thermal dissipation. The device is connected via bias and is fully matched to 50-Ohms with DC blocking capacitors on both RF ports for simple system integration.
View Product Specification
Radio System
Trunked Radio System
Specification
| Min Freq2. | 200MHz |
|---|---|
| Max Freq. | 2500MHz |
| Saturation Power | 5W |
| Power Gain | 35dB |
| VDC | 27 |
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