Wireless Infrastructure
Meeting the continually evolving demands for 4G LTE & 5G wireless infrastructure applications with RFHIC's gallium nitride (GaN) on silicon carbide (SiC) technology solutions
RNP09550-20
Description
RFHIC’s RNP09550-20 is a 550W, gallium nitride solid-state power amplifier (GaN SSPA) operable from 910-920 MHz. It has a drain efficiency of 66% and is capable of both CW and pulsed operations. The RNP09550-20 is equipped with RFHIC’s gallium nitride on silicon carbide (GaN-on-SiC) high-electron-mobility transistors (HEMT), providing higher efficiency, reliability, and linearity. To simplify system integration, the device is fully matched to 50-Ohms with integrated DC blocking capacitors on both RF ports. The RNP09550-20 is ideal for microwave chemical vapor deposition (CVD) reactors, plasma generators, and microwave heating systems.
View Product Specification
Microwave Heating
Microwave Drying
Plasma Generation
Chemical Vapor Deposition (CVD)
Specification
| Max Freq. | 920MHz |
|---|---|
| Output Power | 550W |
| Efficiency | 66% |
| VDC | 50 |
| RF Input Connector | SMA, Female |
| RF Output Connector | N-Type Female |
| Cooling | Air |
| Min Freq2. | 910MHz |
Related Products
RNP04006-A1 ›
RFHIC’s RNP04006-A1 is a 4W, RNP04006-A1 Hybrid Amplifier designed for defense communications (data links) and EW (tactical radio systems) applications...
RNP24550-21 ›
RFHIC’s RNP24550-21 is a 550W, gallium-nitride solid-state power amplifier (GaN SSPA) operable from 2400~2500MHz. It has a drain efficiency of 55% and ...
RNP24500-20G ›
RFHIC’s RNP24500-20G is a 500W, 2400-2500 MHz, GaN solid-state microwave generator designed for microwave heating, drying, plasma lighting, and microwa...
RNP21040-50 ›
RFHIC’s RNP21040-50 is a gallium-nitride on silicon carbide (GaN-on-SiC) narrow-band high-power amplifier suited for general-purpose RF applications. C...
