Wireless Infrastructure
Meeting the continually evolving demands for 4G LTE & 5G wireless infrastructure applications with RFHIC's gallium nitride (GaN) on silicon carbide (SiC) technology solutions
RNP24550-21
Description
RFHIC’s RNP24550-21 is a 550W, gallium-nitride solid-state power amplifier (GaN SSPA) operable from 2400~2500MHz. It has a drain efficiency of 55% and can handle both CW and pulsed operations. The RNP24550-21 is equipped with RFHIC’s gallium-nitride on silicon carbide (GaN-on-SiC) high-electron-mobility transistors (HEMT), providing higher efficiency, reliability, and linearity. To simplify system integration, the device is fully matched to 50-Ohms with integrated DC blocking capacitors on both RF ports. The RNP24550-21 is ideal for microwave chemical vapor deposition (CVD) reactors, plasma generators, and microwave heating systems.
View Product Specification
Microwave Heating
Microwave Drying
Plasma Generation
Specification
| Max Freq. | 2500MHz |
|---|---|
| Output Power | 550W |
| Efficiency | 55% |
| VDC | 49 |
| RF Input Connector | SMA, Female |
| RF Output Connector | N-Type Female |
| Cooling | Air |
| Min Freq2. | 2400MHz |
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