Wireless Infrastructure
Meeting the continually evolving demands for 4G LTE & 5G wireless infrastructure applications with RFHIC's gallium nitride (GaN) on silicon carbide (SiC) technology solutions
RNP58200-10
Description
RFHIC’s RNP58200-10 is a 200W gallium-nitride solid-state power amplifier (GaN SSPA) operable from 5725 to 5875 MHz, designed ideally for plasma generation applications. Built with RFHIC’s GaN-on-SiC technology, the RNP58200-10 is suitable for both CW and pulse applications providing adjustable power, frequency, and phase-shifting features.
View Product Specification
Microwave Heating
Microwave Drying
Plasma Generation
Specification
| Max Freq. | 5875MHz |
|---|---|
| Output Power | 200W |
| Efficiency | 38% |
| VDC | 40 |
| RF Input Connector | SMA, Female |
| RF Output Connector | N-Type Female |
| Cooling | Water |
| Min Freq2. | 5725MHz |
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