Wireless Infrastructure
Meeting the continually evolving demands for 4G LTE & 5G wireless infrastructure applications with RFHIC's gallium nitride (GaN) on silicon carbide (SiC) technology solutions
RIM091K1-20
Description
RFHIC’s RIM091K1-20 is a 1.1kW, gallium nitride solid-state power amplifier (GaN SSPA) operable from 900-930 MHz. It has a drain efficiency of 63% and is capable of both CW and pulsed operations. The RIM091K1-20 is equipped with RFHIC’s gallium nitride on silicon carbide (GaN-on-SiC) high-electron-mobility transistors (HEMT), providing higher efficiency, reliability, and linearity. To simplify system integration, the device is fully matched to 50-Ohms with integrated DC blocking capacitors on both RF ports.
View Product Specification
Microwave Heating
Microwave Drying
Plasma Generation
CVD
Specification
| Max Freq. | 930MHz |
|---|---|
| Output Power | 1100W |
| Efficiency | 63% |
| VDC | 50 |
| Operating Mode | CW/Pulse |
| RF Input Connector | SMA, Female |
| RF Output Connector | 7/16 DIN, Female |
| Cooling | Water |
| Min Freq2. | 900MHz |
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