Wireless Infrastructure
Meeting the continually evolving demands for 4G LTE & 5G wireless infrastructure applications with RFHIC's gallium nitride (GaN) on silicon carbide (SiC) technology solutions
RFHIC’s RRP27312K5-30 is a 2800 W gallium-nitride (GaN) module amplifier designed for radar systems applications. Operating from 2700 to 3100 MHz, the RRP27312K5-30 achieves 30 dB of gain with an efficiency of 40%. The RRP27312K5-30 utilizes our in-house gallium-nitride on silicon carbide (GaN-on-SiC) technology, resulting in higher breakdown voltage, wider bandwidth, and higher efficiency. Both RF ports have integrated DC-blocking capacitors and are fully matched to 50 Ohms.
View Product Specification| Band | S-Band |
|---|---|
| Min Freq2. | 2700MHz |
| Max Freq. | 3100MHz |
| Type | Module |
| Typ Output Power | 2800W |
| Power Gain | 30dB |
| PAE | 40% |
| VDC | 50 |