Wireless Infrastructure
Meeting the continually evolving demands for 4G LTE & 5G wireless infrastructure applications with RFHIC's gallium nitride (GaN) on silicon carbide (SiC) technology solutions

RFHIC’s RRP291K0-10 is an 1100 W gallium-nitride (GaN) module amplifier designed for radar systems applications. Operating from S-band, the RRP291K0-10 achieves 60.5 dB of gain with an efficiency of 35%. The RRP291K0-10 utilizes our in-house gallium-nitride-on silicon carbide (GaN-on-SiC) technology, resulting in higher breakdown voltage, wider bandwidth, and higher efficiency. Both RF ports have integrated DC-blocking capacitors and are fully matched to 50 Ohms.
View Product SpecificationBand | S-band |
---|---|
Min Freq2. | 2700MHz |
Max Freq. | 3100MHz |
Type | Module |
Typ Output Power | 1100W |
Power Gain | 61dB |
PAE | 35% |
VDC | 50 |