Wireless Infrastructure
Meeting the continually evolving demands for 4G LTE & 5G wireless infrastructure applications with RFHIC's gallium nitride (GaN) on silicon carbide (SiC) technology solutions
IE26085P
Description
RFHIC’s IE26085P is a discrete gallium nitride on silicon carbide (GaN-on-SiC) high-electron-mobility transistor which operates from 2496 to 2690 MHz. The IE26085P delivers 85 W of saturated power at 48V with a drain efficiency of 70% at Psat.
The device is a single-stage internally matched power amplifier transistor, packaged in our NS-AS01 ceramic package. The IE26085P can be used in Doherty architecture for the final stage of a base station power amplifier for WiMAX, LTE, and GSM systems.
View Product Specification
WiMAX, LTE, WCDMA, GSM
Multi-Band, Multi-Mode
Multi-Carrier
High Efficiency Doherty Amplifier
Specification
| Typ Output Power | 19W |
|---|---|
| VDC | 52 |
| Package | NS-AS01 |
| Package Type | Flange |
Related Products
IE21110P ›
RFHIC’s IE21110P is a discrete gallium nitride (GaN) on silicon carbide (SiC) high-electron-mobility (HEMT) which operates from 2110 to 2170 MHz. The I...
IE24150P ›
RFHIC’s IE24150P is a 150W gallium-nitride (GaN) on silicon carbide (SiC) transistor designed ideally for microwave heating, scientific, and medical (I...
IE26085P ›
RFHIC’s IE26085P is a discrete gallium nitride on silicon carbide (GaN-on-SiC) high-electron-mobility transistor which operates from 2496 to 2690 MHz. ...
IE24300P ›
RFHIC’s IE24300P is a 300W gallium nitride on silicon carbide GaN-on-SiC transistor designed ideally for microwave heating, drying, and plasma lighting...
