Wireless Infrastructure
Meeting the continually evolving demands for 4G LTE & 5G wireless infrastructure applications with RFHIC's gallium nitride (GaN) on silicon carbide (SiC) technology solutions
ID37411D
Description
RFHIC’s ID37411D is a discrete gallium nitride on silicon carbide (GaN-on-SiC) high-electron-mobility transistor (HEMT) which operates from 3600 to 3800 MHz.The ID37411D delivers 410 W of saturated power at 48V and is designed to provide higher efficiency and linearity. The device is internally matched and is ideally suited for 4G LTE, and 5G NR systems.
View Product Specification
4G LTE, 5G NR system
Multi-Band, Multi-Mode
High Efficiency Doherty Amplifier
Specification
| Max Freq. | 3800MHz |
|---|---|
| Typ Output Power | 56.2W |
| Saturation Power | 410W |
| Power Gain | 14.4dB |
| Efficiency | 47.2% |
| VDC | 48 |
| Package | RF24008DKR3 |
| Package Type | Flange |
| Min Freq2. | 3600MHz |
Related Products
ID37411D ›
RFHIC’s ID37411D is a discrete gallium nitride on silicon carbide (GaN-on-SiC) high-electron-mobility transistor (HEMT) which operates from 3600 to 3800 MHz....
ID38461DR ›
RFHIC’s ID38461DR is a discrete gallium nitride on silicon carbide (GaN-on-SiC) high-electron-mobility transistor (HEMT) which operates up to 3980 MHz. Deliv...
ID38601D ›
RFHIC’s ID38601D is a discrete gallium-nitride on silicon carbide (GaN-on-SiC) high-electron-mobility transistor (HEMT) which operates from 3700 to 3980 MHz....
ID36461D ›
RFHIC’s ID36461D is a discrete gallium nitride on silicon carbide (GaN-on-SiC) high-electron-mobility transistor (HEMT) which operates up to 3600 MHz.The ID3...
