Wireless Infrastructure
Meeting the continually evolving demands for 4G LTE & 5G wireless infrastructure applications with RFHIC's gallium nitride (GaN) on silicon carbide (SiC) technology solutions
IE21385D
Description
RFHIC’s IE21385D is a discrete gallium nitride (GaN) on silicon carbide (SiC) high-electron-mobility (HEMT) operable from 2110 to 2170 MHz. The IE21385D delivers 385 W of saturated power at 48V with a drain efficiency of 56% at 48 dBm.The IE21385D is designed to provide high efficiency and linearity. The device is internally matched and is ideally suited for multi-band, LTE, and WiMAX base station applications.
View Product Specification
WiMAX, LTE, WCDMA, GSM
Multi-Band, Multi-Mode
Multi-Carrier
High Efficiency Doherty Amplifier
Specification
| Max Freq. | 2170MHz |
|---|---|
| Typ Output Power | 63W |
| Saturation Power | 385W |
| Power Gain | 15dB |
| Efficiency | 56% |
| VDC | 48 |
| Package | RF24001DKR3 |
| Package Type | Flange |
| Min Freq2. | 2110MHz |
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