Wireless Infrastructure
Meeting the continually evolving demands for 4G LTE & 5G wireless infrastructure applications with RFHIC's gallium nitride (GaN) on silicon carbide (SiC) technology solutions
ID24330WD
Description
RFHIC’s ID24330WD is a gallium nitride (GaN) on silicon carbide (SiC) transistor designed ideally for plasma lighting, RF microwave heating, and microwave drying applications. The ID24330WD has a saturated power of 347W at 48V and a peak power of 55.4dBm at 2.4GHz. The ID24330WD operates from 2300 to 2500 MHz and is internally matched, simplifying system integration.
View Product Specification
Plasma Lighting Systems
Microwave Heating & Drying
Solid-State Microwave Ovens
Semiconductor Equipment
Bio & Health Sciences
Specification
| Max Freq. | 2500MHz |
|---|---|
| Output Power | 347W |
| Power Gain | 13.5dB |
| Drain Efficiency | 47.2% |
| VDC | 48 |
| Package Type | Flange |
| Min Freq2. | 2300MHz |
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