Wireless Infrastructure
Meeting the continually evolving demands for 4G LTE & 5G wireless infrastructure applications with RFHIC's gallium nitride (GaN) on silicon carbide (SiC) technology solutions
ID18275WD
Description
RFHIC’s ID18275WD is a discrete gallium-nitride on silicon carbide (GaN-on-SiC) high-electron-mobility transistor (HEMT) operable from 1805 to 1880 MHz.The ID18275WD delivers 275 W of saturated power at 48V and is designed to provide higher efficiency and linearity. The device is internally matched and is ideally suited for WiMAX, LTE, and WCDMA systems.
View Product Specification
WiMAX, LTE, WCDMA
Multi-Band, Multi-Mode
Multi-Carrier
High Efficiency Doherty Amplifier
Specification
| Max Freq. | 1880MHz |
|---|---|
| Typ Output Power | 50W |
| Saturation Power | 331W |
| Power Gain | 14dB |
| Efficiency | 56.4% |
| VDC | 48 |
| Package | RF18010DKR3 |
| Package Type | Flange |
| Min Freq2. | 1805MHz |
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