Wireless Infrastructure
Meeting the continually evolving demands for 4G LTE & 5G wireless infrastructure applications with RFHIC's gallium nitride (GaN) on silicon carbide (SiC) technology solutions
IE27330P
Description
RFHIC’s IE27330P is a discrete gallium nitride on silicon carbide (GaN-on-SiC) high-electron-mobility transistor (HEMT) which operates from 2620 to 2690 MHz. The IE27330P delivers 330 W of saturated power at 48V with a drain efficiency of 39% at Psat. The device is a single-stage internally matched power amplifier transistor packaged in our NS-AS01 ceramic package. The IE27330P can be used in Doherty architecture for the final stage of a base station power amplifier for WiMAX, LTE, and GSM systems.
View Product Specification
WiMAX, LTE, WCDMA, GSM
Multi-Band, Multi-Mode
Multi-Carrier
High Efficiency, Doherty Amplifier
Specification
| Max Freq. | 2690MHz |
|---|---|
| Typ Output Power | 63W |
| Saturation Power | 330W |
| Power Gain | 15.4dB |
| Efficiency | 39% |
| VDC | 48 |
| Package | NS-AS01 |
| Package Type | Flange |
| Min Freq2. | 2620MHz |
Related Products
IE27165PE ›
RFHIC’s IE27165PE is a discrete gallium nitride (GaN) on silicon carbide (SiC) high-electron-mobility (HEMT) operable from 2620 to 2690 MHz. The IE2716...
IE27275D ›
RFHIC’s IE27275D is a discrete gallium nitride on silicon carbide (GaN-on-SiC) high-electron-mobility transistor (HEMT) which operates from 2575 to 263...
IE27330D ›
RFHIC’s IE27330D is a discrete gallium nitride on silicon carbide (GaN-on-SiC) high-electron-mobility transistor (HEMT) which operates from 2620 to 269...
IE27330P ›
RFHIC’s IE27330P is a discrete gallium nitride on silicon carbide (GaN-on-SiC) high-electron-mobility transistor (HEMT) which operates from 2620 to 269...