Wireless Infrastructure
Meeting the continually evolving demands for 4G LTE & 5G wireless infrastructure applications with RFHIC's gallium nitride (GaN) on silicon carbide (SiC) technology solutions
IE27330D
Description
RFHIC’s IE27330D is a discrete gallium nitride on silicon carbide (GaN-on-SiC) high-electron-mobility transistor (HEMT) which operates from 2620 to 2690 MHz. The IE27330D delivers 330 W of saturated power at 48V with a drain efficiency of 54% at 48 dBm.The IE27330D is designed to provide users with easier system integration. The device is internally matched and is ideally suited for WiMAX, LTE, and multi-carrier base station equipment.
View Product Specification
WiMAX, LTE, WCDMA, GSM
Multi-Band, Multi-Mode
Multi-Carrier
High Efficiency Doherty Amplifier
Specification
| Max Freq. | 2690MHz |
|---|---|
| Typ Output Power | 79W |
| Saturation Power | 330W |
| Power Gain | 14.2dB |
| Efficiency | 54% |
| VDC | 48 |
| Package | RF24001DKR3 |
| Package Type | Flange |
| Min Freq2. | 2620MHz |
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