Wireless Infrastructure
Meeting the continually evolving demands for 4G LTE & 5G wireless infrastructure applications with RFHIC's gallium nitride (GaN) on silicon carbide (SiC) technology solutions
ID26275WD
Description
RFHIC’s ID26275WD is a discrete gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) high-electron-mobility (HEMT) which operates from 2620 to 2690 MHz.The ID26275WD delivers 316 W of saturated power at 48V and is designed to provide higher efficiency and linearity. The device is internally matched and is ideally suited for WiMAX, LTE, and WCDMA systems.
View Product Specification
WiMAX, LTE, WCDMA
Multi-Band, Multi-Mode
Multi-Carrier
High Efficiency Doherty Amplifier
Specification
| Max Freq. | 2690MHz |
|---|---|
| Typ Output Power | 54W |
| Saturation Power | 316W |
| Power Gain | 14.1dB |
| Efficiency | 51% |
| VDC | 48 |
| Package | RF18010DKR3 |
| Package Type | Flange |
| Min Freq2. | 2620MHz |
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