Wireless Infrastructure
Meeting the continually evolving demands for 4G LTE & 5G wireless infrastructure applications with RFHIC's gallium nitride (GaN) on silicon carbide (SiC) technology solutions
ID25275WD
Description
RFHIC’s ID25275WD is a discrete gallium-nitride on silicon carbide (GaN-on-SiC) high-electron-mobility transistor (HEMT) operable from 2520 to 2630 MHz. The ID25275WD delivers 316 W of saturated power at 48V and is designed to provide higher efficiency and linearity. The device is internally matched and is ideally suited for WiMAX, LTE, and WCDMA systems.
View Product Specification
WiMAX, LTE, WCDMA
Multi-Band, Multi-Mode
Multi-Carrier
High Efficiency Doherty Amplifier
Specification
| Max Freq. | 2630MHz |
|---|---|
| Typ Output Power | 40W |
| Saturation Power | 316W |
| Power Gain | 14.4dB |
| Efficiency | 50% |
| VDC | 48 |
| Package | RF18010DKR3 |
| Package Type | Flange |
| Min Freq2. | 2520MHz |
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