Wireless Infrastructure
Meeting the continually evolving demands for 4G LTE & 5G wireless infrastructure applications with RFHIC's gallium nitride (GaN) on silicon carbide (SiC) technology solutions
IE26195WD
Description
RFHIC’s IE26195WD is a discrete gallium nitride on silicon carbide (GaN-on-SiC) high-electron-mobility transistor (HEMT) which operates from 2575 to 2635 MHz. The IE26195WD delivers 195 W of saturated power at 48V with a drain efficiency of 54% at Psat. The IE26195WD is designed to provide high efficiency and linearity. The device is internally matched and is ideally suited for LTE, multi-carrier, and Doherty amplifier base station equipment applications.
View Product Specification
WiMAX, LTE, WCDMA, GSM
Multi-Band, Multi-Mode
Multi-Carrier
High Efficiency Doherty Amplifier
Specification
| Max Freq. | 2635MHz |
|---|---|
| Typ Output Power | 32W |
| Saturation Power | 195W |
| Power Gain | 14.4dB |
| Efficiency | 54% |
| VDC | 48 |
| Package | RF12001DKR3 |
| Package Type | Flange |
| Min Freq2. | 2575MHz |
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