Wireless Infrastructure
Meeting the continually evolving demands for 4G LTE & 5G wireless infrastructure applications with RFHIC's gallium nitride (GaN) on silicon carbide (SiC) technology solutions
IE19195WD
Description
RFHIC’s IE19195WD is a discrete gallium nitride on silicon carbide (GaN-on-SiC) high-electron-mobility transistor (HEMT) which operates from 1880 to 2025 MHz.The IE19195WD delivers 195 W of saturated power at 48V with a drain efficiency of 49% at 45dBm. The IE19195WD is an asymmetrical Doherty gallium nitride (GaN) high-electron-mobility (HEMT) designed to provide high efficiency and linearity. The device is internally matched and is ideally suited for muti-band, LTE, and WCDMA base station applications.
View Product Specification
WiMAX, LTE, WCDMA, GSM
Multi-Band, Multi-Mode
Multi-Carrier
High Efficiency Doherty Amplifier
Specification
| Max Freq. | 2025MHz |
|---|---|
| Typ Output Power | 32W |
| Saturation Power | 195W |
| Power Gain | 17dB |
| Efficiency | 49% |
| VDC | 48 |
| Package | RF12001DKR3 |
| Package Type | Flange |
| Min Freq2. | 1880MHz |
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