Wireless Infrastructure
Meeting the continually evolving demands for 4G LTE & 5G wireless infrastructure applications with RFHIC's gallium nitride (GaN) on silicon carbide (SiC) technology solutions
IE08165P
Description
RFHIC’s IE08165P is a discrete gallium nitride on silicon carbide (GaN-on-SiC) high-electron-mobility transistor (HEMT) which operates from 770 to 900 MHz. The IE08165P delivers 165 W of saturated power at 48V with a drain efficiency of 40% at Psat. The device is a single-stage internally matched power amplifier transistor packaged in our NS-AS01 ceramic package. The IE08165P can be used in Doherty architecture for the final stage of a base station power amplifier for WiMAX, LTE, and GSM systems.
View Product Specification
WiMAX, LTE, WCDMA, GSM
Multi-Band, Multi-Mode
Multi-Carrier
High Efficiency Doherty Amplifier
Specification
| Max Freq. | 900MHz |
|---|---|
| Typ Output Power | 37W |
| Saturation Power | 165W |
| Power Gain | 51dB |
| Efficiency | 40% |
| VDC | 48 |
| Package | NS-AS01 |
| Package Type | Flange |
| Min Freq2. | 770MHz |
Related Products
IE08165P ›
RFHIC’s IE08165P is a discrete gallium nitride on silicon carbide (GaN-on-SiC) high-electron-mobility transistor (HEMT) which operates from 770 to 900 ...
IE08220P ›
RFHIC’s IE08220P is a discrete gallium nitride on silicon carbide (GaN-on-SiC) high-electron-mobility transistor (HEMT) which operates from 758 to 858 ...
IE09150PC ›
RFHIC’s IE09150PC is a 150W continuous-wave gallium-nitride on silicon carbide (GaN-on-SiC) transistor. Operable from 900 to 930 MHz, the IE09150PC pro...
IE09300PC ›
RFHIC’s IE09300PC is a 300W gallium-nitride (GaN) silicon carbide (SiC) transistor ideally suited for microwave heating, drying, and plasma lighting ap...
