Wireless Infrastructure
Meeting the continually evolving demands for 4G LTE & 5G wireless infrastructure applications with RFHIC's gallium nitride (GaN) on silicon carbide (SiC) technology solutions
ETQ2014P
Description
RFHIC’s ETQ2014P is a discrete gallium-nitride on silicon carbide (GaN-on-SiC) high-electron-mobility transistor (HEMT) which operates up to 6000 MHz. The ETQ2014P delivers 14 W of saturated power at 48V with a drain efficiency of 35% at Psat, 2.6 GHz.The device is a single-stage power amplifier transistor packaged in our DFN66726L-Q2 plastic package. The ETQ2014P can be used in Doherty architecture for the final stage of a base station power amplifier for WiMAX, LTE, and GSM systems.
View Product Specification
WiMAX, LTE, WCDMA, GSM
Multi-Band, Multi-Mode
Multi-Carrier
High Efficiency, Doherty Amplifier
Specification
| Max Freq. | 6000MHz |
|---|---|
| Typ Output Power | 3.2W |
| Saturation Power | 15W |
| Power Gain | 19dB |
| Efficiency | 34% |
| VDC | 48 |
| Package | DFN66726L-Q2 |
| Package Type | Surface Mount |
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