Wireless Infrastructure
Meeting the continually evolving demands for 4G LTE & 5G wireless infrastructure applications with RFHIC's gallium nitride (GaN) on silicon carbide (SiC) technology solutions
IE09300PC
Description
RFHIC’s IE09300PC is a 300W gallium-nitride (GaN) silicon carbide (SiC) transistor ideally suited for microwave heating, drying, and plasma lighting applications. Operable from 900 to 930 MHz, the IE09300PC provides a high gain of 18.0dB with an 80.21% drain efficiency at 50V. To simplify system integration, the IE09300PC is fully matched to 50-Ohms with integrated DC blocking capacitors on both RF ports. The device is capable of both continuous wave (CW) and pulse operations and can be customized upon request.
View Product Specification
Microwave Heating
Microwave Drying
Microwave Ablation
Microwave Plasma Generation
Microwave Lighting
Specification
| Max Freq. | 930MHz |
|---|---|
| Output Power | 300W |
| Power Gain | 18dB |
| Drain Efficiency | 80.2% |
| VDC | 50 |
| Package Type | Flange |
| Min Freq2. | 900MHz |
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