Wireless Infrastructure
Meeting the continually evolving demands for 4G LTE & 5G wireless infrastructure applications with RFHIC's gallium nitride (GaN) on silicon carbide (SiC) technology solutions
IE24300P
Description
RFHIC’s IE24300P is a 300W gallium nitride on silicon carbide GaN-on-SiC transistor designed ideally for microwave heating, drying, and plasma lighting applications. Operable from 2400 to 2500 MHz, the IE24300P provides a high gain of 12.3dB with a 71.2% drain efficiency at 50V. To simplify system integration, the IE24300P is fully matched to 50-Ohms with integrated DC blocking capacitors on both RF ports. The device is capable of both continuous wave (CW) and pulse operations and can be customized upon request.
View Product Specification
Microwave Heating
Microwave Drying
Microwave Ablation
Microwave Plasma Generation
Microwave Lighting
Specification
| Max Freq. | 2500MHz |
|---|---|
| Output Power | 300W |
| Power Gain | 12.3dB |
| Drain Efficiency | 71.2% |
| VDC | 50 |
| Package Type | Flange |
| Min Freq2. | 2400MHz |
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